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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW29 VHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power handling capability, the transistor is especially suited for design of wide-band and semi-wide-band v.h.f. amplifiers. Together with a BFQ42 driver stage, the chain can deliver 15 W with a maximum drive power of 120 mW at 175 MHz. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" capstan envelope with a ceramic cap. All leads are isolated from the stud.
BLW29
QUICK REFERENCE DATA R.F. performance up to Th = 25 C MODE OF OPERATION c.w. class-B c.w. class-B VCE V 13,5 12,5 f MHz 175 175 PL W 15 15 Gp dB > 10 typ. 10, 5 % > 60 typ. 67 zi 1,3 + j0,68 - YL mS 180 - j54 -
PIN CONFIGURATION
PINNING - SOT120 PIN DESCRIPTION collector emitter base emitter
halfpage
4
1 2 3
1
3
handbook, halfpage
c
4
b
MBB012
e
2
MSB056
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation (f > 1 MHz); Tmb = 25 C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLW29
36 V 18 V 4V 2,75 A 8A 53 W 200 C
-65 to + 150 C
MGP414
handbook, halfpage
10
handbook, halfpage
60
MGP415
IC (A) Th = 70 C 1 Tmb = 25 C
Prf (W) 40
short-time operation during mismatch continuous r.f. operation derate by 0.3 W/K continuous d.c. operation derate by 0.25 W/K
20
10-1 1 10 VCE (V) 102
0 0 50 Th (C) 100
Fig.2 D.C. SOAR.
Fig.3
R.F. power dissipation; VCE 16,5 V; f 1 MHz.
THERMAL RESISTANCE (dissipation = 15 W; Tmb = 77 C, i.e. Th = 70 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 3,7 K/W 3,05 K/W 0,45 K/W
August 1986
3
Philips Semiconductors
Product specification
VHF power transistor
CHARACTERISTICS Tj = 25 C Collector-emitter breakdown voltage VBE = 0; IC = 15 mA Collector-emitter breakdown voltage open base; IC = 100 mA Emitter-base breakdown voltage open collector; IE = 5 mA Collector cut-off current VBE = 0; VCE = 18 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) hFE typ. IC = 1,75 A; VCE = 5 V Collector-emitter saturation voltage(1) IC = 5 A; IB = 1 A Transition frequency at f = 100 MHz(1) -IE = 1,75 A; VCB = 13,5 V -IE = 5 A; VCB = 13,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 13,5 V Feedback capacitance at f = 1 MHz IC = 100 mA; VCE = 13,5 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp 200 s; 0,02. Cre Ccs typ. typ. Cc typ. fT fT typ. typ. VCEsat typ. ESBO ESBR > > ICES < V(BR)EBO > V(BR)CEO > V(BR) CES >
BLW29
36 V 18 V 4V 5 mA 4 mJ 4 mJ 40 10 to 80 1,5 V 900 MHz 825 MHz 43 pF 27 pF 2 pF
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLW29
handbook, halfpage
60
MGP416
handbook, halfpage
150
MGP417
hFE
VCE = 13.5 V
Cc (pF) 100
40
5V
typ 20 50
0 0 5 IC (A) 10
0 0 10 VCB (V) 20
Fig.4 Typical values; Tj = 25 C.
Fig.5 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
handbook, full pagewidth
1500
MGP418
fT (MHz)
1000 typ
500
0 0 2 4 6 8 -IE (A) 10
Fig.6 VCB = 13,5 V; f = 100 MHz; Tj = 25 C.
August 1986
5
Philips Semiconductors
Product specification
VHF power transistor
APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 C f (MHz) 175 175 VCE (V) 13,5 12,5 PL (W) 15 15 PS (W) < 1,5 typ. 1,34 Gp (dB) > 10 typ. 10,5 IC (A) < 1,85 typ. 1,8 (%) > 60 typ. 67 zi () 1,3 + j0,68 -
BLW29
YL(mS) 180 - j54 -
handbook, full pagewidth
C3a C1 50 C2 L1 L3 C3b T.U.T.
L4
L7
C6 50 C7
L5 C4 C5 R1 L2 R2
L6
MGP419
+VCC
Fig.7 Test circuit; c.w. class-B.
List of components: C1 C2 C4 C5 L1 L2 L3 L5 L7 R1 = = = = = = = = = = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C6 = C7 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) C3b = 47 pF ceramic capacitor (500 V) 1 nF ceramic capacitor 100 nF polyester capacitor
1 2
C3a =
turn Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2 x 5 mm
L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = strip (12 mm x 6 mm); taps for C3a and C3b at 5 mm from transistor 412 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2 x 5 mm 2 turns closely wound enamelled Cu wire (1,6 mm); int. dia. 6,0 mm; leads 2 x 5 mm R2 = 10 carbon resistor
L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8.
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLW29
150
handbook, full pagewidth
72
L2 C4
L6 +VCC
R1 strip C1 C2 L1 C3a L3 L4
C5
R2
L5 C6 C7 L7
C3b
rivet
MGP420
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets.
August 1986
7
Philips Semiconductors
Product specification
VHF power transistor
BLW29
handbook, halfpage
30
MGP421
MGP422
handbook, halfpage
25
Gp PL (W) 20 15 70 C 10 10 70 C 5 Th = 25 C (dB) 20 Gp Th = 25 C
125 (%) 100
75
Th = 70 C 25 C 50
25
0 0 VCE = 13,5 V; - - - VCE = 12, 5 V 2 PS (W) 4
0 0 VCE = 13,5 V; - - - VCE = 12, 5 V 10 20 PL (W) 30
0
Fig.9 Typical values; f = 175 MHz. .
Fig.10 Typical values; f = 175 MHz.
handbook, halfpage
25
MGP423
PLnom (W) (VSWR = 1) 20 VSWR = 5
The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. The graph applies to the situation in which the drive (PS/PSnom) increases linearly with supply over-voltage ratio.
15
10 20 50
PS PSnom 10 1 1.1 1.2 VCE VCEnom Th = 70 C; Rth mb-h = 0,45 K/W; VCEnom = 13,5 V or 12,5 V; PS = PSnom at VCEnom and VSWR = 1 1.3
OPERATING NOTE Below 70 MHz a base-emitter resistor of 10 is recommended to avoid oscillation. This resistor must be effective for r.f. only.
Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz;
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLW29
handbook, halfpage
10
MGP424
handbook, halfpage
7.5
MGP425
CL RL RL
0 CL (pF) -100
ri, xi () 5 ri xi ri 0 xi
RL () 5
2.5
-200
CL -5 0 0 250 f (MHz) 500 0 250 f (MHz) -300 500
Typical values; VCE = 13,5 V; PL = 15 W; Th = 25 C.
Typical values; VCE = 13,5 V; PL = 15 W; Th = 25 C.
Fig.12
Fig.13
handbook, halfpage
30
MGP426
Gp (dB) 20
10
0 0 250 f (MHz) 500
Typical values; VCE = 13,5 V; PL = 15 W; Th = 25 C.
Fig.14
August 1986
9
Philips Semiconductors
Product specification
VHF power transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
D
BLW29
SOT120A
A Q c
N1 N
D1 D2
A w1 M A M W
N3 X H b detail X M1
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.90 5.48 c 0.18 0.14 D 9.73 9.47 D1 8.39 8.12 D2 9.66 9.39 H 27.44 25.78 L 9.00 8.00 M 3.41 2.92 M1 1.66 1.39 N 12.83 11.17 N1 1.60 0.00 N3 3.31 2.54 0.130 0.100 Q 4.35 3.98 0.171 0.157 W w1 0.38 8-32 UNC 0.015
inches 0.283 0.248
0.232 0.007 0.216 0.004
0.383 0.330 0.380 1.080 0.373 0.320 0.370 1.015
0.354 0.134 0.315 0.115
0.065 0.505 0.063 0.055 0.440 0.000
OUTLINE VERSION SOT120A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
August 1986
10
Philips Semiconductors
Product specification
VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW29
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
11

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